SUD50N06-07L-E3
MOSFET N-CH 60V 96A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD50N06-07L-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 96A at 25°C (Tc). It offers a low on-resistance (Rds On) of 7.4mOhm at 20A and 10V Vgs. The device is designed for surface mounting in a TO-252-3 (DPAK) package and supports a maximum power dissipation of 136W (Tc). Key electrical characteristics include a gate charge (Qg) of 144 nC at 10V Vgs and an input capacitance (Ciss) of 5800 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management applications across industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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