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SUD50N06-07L-E3

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SUD50N06-07L-E3

MOSFET N-CH 60V 96A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50N06-07L-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 96A at 25°C (Tc). It offers a low on-resistance (Rds On) of 7.4mOhm at 20A and 10V Vgs. The device is designed for surface mounting in a TO-252-3 (DPAK) package and supports a maximum power dissipation of 136W (Tc). Key electrical characteristics include a gate charge (Qg) of 144 nC at 10V Vgs and an input capacitance (Ciss) of 5800 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management applications across industrial and automotive sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Rds On (Max) @ Id, Vgs7.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)136W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5800 pF @ 25 V

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