SUD50N04-16P-E3
MOSFET N-CH 40V 9.8A/20A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50N04-16P-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 9.8A at 25°C ambient and 20A at 25°C case temperature. The low on-resistance (Rds(on)) of 16mOhm is achieved at 15A and 10V Vgs, with a guaranteed maximum of 16mOhm at 15A, 10V. The MOSFET exhibits a maximum gate charge (Qg) of 60 nC at 10V Vgs and an input capacitance (Ciss) of 1655 pF maximum at 20V Vds. It supports a wide drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±16V. The component is housed in a TO-252AA (DPAK) surface-mount package, enabling efficient thermal management with a maximum power dissipation of 3.1W (Ta) and 35.7W (Tc). Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1655 pF @ 20 V |
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