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SUD50N04-16P-E3

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SUD50N04-16P-E3

MOSFET N-CH 40V 9.8A/20A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SUD50N04-16P-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 9.8A at 25°C ambient and 20A at 25°C case temperature. The low on-resistance (Rds(on)) of 16mOhm is achieved at 15A and 10V Vgs, with a guaranteed maximum of 16mOhm at 15A, 10V. The MOSFET exhibits a maximum gate charge (Qg) of 60 nC at 10V Vgs and an input capacitance (Ciss) of 1655 pF maximum at 20V Vds. It supports a wide drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±16V. The component is housed in a TO-252AA (DPAK) surface-mount package, enabling efficient thermal management with a maximum power dissipation of 3.1W (Ta) and 35.7W (Tc). Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1655 pF @ 20 V

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