SUD50N04-05L-E3
MOSFET N-CH 40V 115A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50N04-05L-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device offers a 40V drain-source breakdown voltage and a continuous drain current capability of 115A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance of 5.4 mOhm at 20A and 10V Vgs, achieved through advanced trench technology, minimizes conduction losses. It features a gate charge of 135 nC (max) at 10V Vgs and a Ciss of 5600 pF (max) at 25V Vds. The MOSFET is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. It is designed for operation across a wide temperature range of -55°C to 175°C (TJ). This component is commonly utilized in applications such as power supplies, motor control, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |