SUD50N03-16P-GE3
MOSFET N-CH 30V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD50N03-16P-GE3: This N-Channel TrenchFET® MOSFET offers a 30V drain-to-source voltage. It features a maximum on-resistance of 16mOhm at 15A and 10V Vgs, with a gate charge of 13nC at 4.5V. Continuous drain current is rated at 15A (Ta) and 37A (Tc), with power dissipation capabilities of 6.5W (Ta) and 40.8W (Tc). The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Operating temperature range is -55°C to 175°C. This component is supplied in a TO-252AA surface mount package, delivered on tape and reel. Applications include power management and switching in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.5W (Ta), 40.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |