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SUD50N03-16P-E3

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SUD50N03-16P-E3

MOSFET N-CH 30V TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® Series SUD50N03-16P-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 15A at 25°C ambient or 37A at 25°C case temperature. The device features a low on-resistance of 16mOhm maximum at 15A and 10V Vgs, contributing to reduced conduction losses. Its low gate charge of 13 nC maximum at 4.5V Vgs supports efficient switching performance. The SUD50N03-16P-E3 is packaged in a surface-mount TO-252AA (DPAK) package, facilitating automated assembly. Maximum power dissipation is rated at 6.5W ambient or 40.8W case temperature. This MOSFET is suitable for applications in automotive, industrial power supplies, and power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)6.5W (Ta), 40.8W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V

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