SUD50N03-16P-E3
MOSFET N-CH 30V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Series SUD50N03-16P-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 15A at 25°C ambient or 37A at 25°C case temperature. The device features a low on-resistance of 16mOhm maximum at 15A and 10V Vgs, contributing to reduced conduction losses. Its low gate charge of 13 nC maximum at 4.5V Vgs supports efficient switching performance. The SUD50N03-16P-E3 is packaged in a surface-mount TO-252AA (DPAK) package, facilitating automated assembly. Maximum power dissipation is rated at 6.5W ambient or 40.8W case temperature. This MOSFET is suitable for applications in automotive, industrial power supplies, and power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.5W (Ta), 40.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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