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SUD50N03-12P-GE3

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SUD50N03-12P-GE3

MOSFET N-CH 30V 16.8A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50N03-12P-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 16.8A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 17mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 42 nC at 10V. The input capacitance (Ciss) is a maximum of 1600 pF at 25V. Designed for efficient power management, this MOSFET features a low thermal resistance with a maximum power dissipation of 39W at 25°C (Tc). It is housed in a surface-mount TO-252AA (DPAK) package and operates across a temperature range of -55°C to 150°C. This device is suitable for applications in power supplies, motor control, and automotive systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.8A (Ta)
Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)39W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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