SUD50N03-12P-GE3
MOSFET N-CH 30V 16.8A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50N03-12P-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 16.8A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 17mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 42 nC at 10V. The input capacitance (Ciss) is a maximum of 1600 pF at 25V. Designed for efficient power management, this MOSFET features a low thermal resistance with a maximum power dissipation of 39W at 25°C (Tc). It is housed in a surface-mount TO-252AA (DPAK) package and operates across a temperature range of -55°C to 150°C. This device is suitable for applications in power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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