SUD50N03-12P-E3
MOSFET N-CH 30V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUD50N03-12P-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power conversion. This device features a 30V drain-source breakdown voltage (Vdss) and offers a low on-resistance (Rds(on)) of 12mOhm at 20A and 10V Vgs. With a continuous drain current (Id) of 17.5A at 25°C ambient and a continuous drain current of 46.8W at 25°C case temperature, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 42nC at 10V Vgs and an input capacitance (Ciss) of 1600pF at 25V Vds. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs(max)) of ±20V. Operating across a wide temperature range of -55°C to 175°C, this surface-mount component is packaged in a TO-252AA (DPAK) and supplied on tape and reel. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.5W (Ta), 46.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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