SUD50N03-11-E3
MOSFET N-CH 30V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50N03-11-E3 is an N-Channel Power MOSFET designed for demanding power conversion applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current capability of 50 A at 25°C (Tc). The TrenchFET® technology ensures a low on-resistance (Rds On) of 11 mOhm maximum at 25 A and 10 V Vgs, facilitating high efficiency. Its TO-252AA package allows for surface mounting and offers a maximum power dissipation of 7.5 W (Ta) or 62.5 W (Tc). Key electrical parameters include a gate charge (Qg) of 20 nC maximum at 5 V Vgs and input capacitance (Ciss) of 1130 pF maximum at 25 V Vds. The device operates across a wide temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5 V to 10 V. This component is commonly utilized in automotive and industrial power management systems requiring robust performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |