SUD50N03-09P-GE3
MOSFET N-CH 30V 63A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50N03-09P-GE3 is an N-Channel TrenchFET® power MOSFET featuring 30V drain-source breakdown voltage and 63A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 9.5mOhm maximum at 20A and 10V Vgs. It is designed for surface mounting in a TO-252AA package, delivering robust performance with a maximum power dissipation of 65.2W at 25°C (Tc). Key parameters include a 16 nC maximum gate charge at 4.5V Vgs and 2200 pF maximum input capacitance at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 65.2W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |