SUD50N03-06P-E3
MOSFET N-CH 30V 84A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SUD50N03-06P-E3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 84A at 25°C (Tc). The low on-resistance (Rds On) of 6.5mOhm at 20A and 10V gate-source voltage (Vgs) ensures efficient power transfer. With a maximum gate charge (Qg) of 30nC at 4.5V, it offers optimized switching performance. The device is housed in a TO-252-3, DPAK surface-mount package, facilitating integration into automated assembly processes. It is rated for a maximum continuous power dissipation of 88W (Tc). Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in various industrial power management solutions, including automotive and high-efficiency power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |