SUD50N03-06AP-T4E3
MOSFET N-CH 30V 90A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD50N03-06AP-T4E3 is a TrenchFET® series N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30 V drain-source voltage and a continuous drain current capability of 90 A at 25°C (Tc). The low on-resistance of 5.7 mOhm at 20 A and 10 V Vgs ensures minimal power loss during operation. With a maximum gate charge (Qg) of 95 nC at 10 V, it facilitates fast switching speeds. The MOSFET is housed in a TO-252-3, DPAK package, suitable for surface mounting. Its operating temperature range is from -55°C to 175°C (TJ), and it offers a maximum power dissipation of 10 W (Ta) or 83 W (Tc). This device is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V |
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