SUD50N03-06AP-E3
MOSFET N-CH 30V 90A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® MOSFET N-Channel SUD50N03-06AP-E3. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). Featuring a low Rds(on) of 5.7mOhm maximum at 20A and 10V Vgs, it is constructed using advanced TrenchFET technology for superior performance. The gate charge is specified at 95 nC maximum at 10V Vgs, with input capacitance (Ciss) at 3800 pF maximum at 15V Vds. Maximum power dissipation reaches 10W at ambient temperature and 83W at case temperature. This surface mount component is available in a TO-252AA package and operates across a temperature range of -55°C to 175°C. Applications include power management, automotive systems, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V |
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