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SUD50N025-06P-E3

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SUD50N025-06P-E3

MOSFET N-CH 25V 78A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SUD50N025-06P-E3 is a 25V N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 6.2mOhm at 20A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 78A (Tc) and a maximum power dissipation of 65W (Tc), it is suitable for demanding power delivery requirements. The MOSFET utilizes a TO-252AA surface mount package, facilitating efficient thermal management and automated assembly. Key electrical parameters include a gate charge of 66nC (max) at 10V Vgs and an input capacitance of 2490pF (max) at 12V Vds. Operating across a wide temperature range from -55°C to 175°C, this component is well-suited for use in automotive, industrial power supplies, and DC-DC converter designs.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Rds On (Max) @ Id, Vgs6.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)10.7W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2490 pF @ 12 V

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