SUD50N025-06P-E3
MOSFET N-CH 25V 78A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUD50N025-06P-E3 is a 25V N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 6.2mOhm at 20A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 78A (Tc) and a maximum power dissipation of 65W (Tc), it is suitable for demanding power delivery requirements. The MOSFET utilizes a TO-252AA surface mount package, facilitating efficient thermal management and automated assembly. Key electrical parameters include a gate charge of 66nC (max) at 10V Vgs and an input capacitance of 2490pF (max) at 12V Vds. Operating across a wide temperature range from -55°C to 175°C, this component is well-suited for use in automotive, industrial power supplies, and DC-DC converter designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10.7W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 12 V |