SUD50N02-09P-GE3
MOSFET N-CH 20V 20A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUD50N02-09P-GE3 is an N-Channel TrenchFET® MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 20A at 25°C (Ta), with a maximum power dissipation of 39.5W (Tc). The low on-resistance of 14mOhm at 20A and 10V (Id, Vgs) is achieved through advanced MOSFET technology. Key parameters include a gate charge of 16 nC (Qg) at 10V and input capacitance (Ciss) of 1300 pF at 10V. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a surface-mount TO-252-3, DPAK package. Drive voltages for optimal performance range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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