SUD50N02-09P-E3
MOSFET N-CH 20V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET N-Channel SUD50N02-09P-E3 offers a 20V drain-to-source voltage and 20A continuous drain current at 25°C. This device features a low Rds(on) of 9.5mOhm maximum at 20A and 10V Vgs. With a 4.5V gate drive, the SUD50N02-09P-E3 provides efficient switching performance. The component boasts a maximum gate charge of 16nC at 4.5V and an input capacitance of 1300pF at 10V Vds. Power dissipation is rated at 6.5W (Ta) and 39.5W (Tc). The TO-252AA package is suitable for surface mount applications and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power management solutions, automotive electronics, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.5W (Ta), 39.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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