SUD50N02-06P-E3
MOSFET N-CH 20V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50N02-06P-E3 is an N-Channel Power MOSFET designed for efficient power management. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 6mOhm at 20A and 10V, it minimizes conduction losses. The MOSFET operates with a gate-source voltage (Vgs) range of 4.5V to 10V for optimal performance. Key characteristics include a maximum gate charge (Qg) of 30 nC at 4.5V and an input capacitance (Ciss) of 2550 pF at 10V. Power dissipation is rated at 6.8W (Ta) and 65W (Tc). The TO-252AA (DPAK) surface mount package is suitable for high-density applications. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial, and consumer electronics power conversion circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.8W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 10 V |