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SUD50N02-04P-E3

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SUD50N02-04P-E3

MOSFET N-CH 20V 50A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50N02-04P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 20 V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 50 A at 25°C (Tc). The low on-resistance (Rds On) is specified as 4.3 mOhm maximum at 20 A and 10 V Vgs. Gate drive requirements range from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a typical gate charge (Qg) of 60 nC at 4.5 V Vgs and input capacitance (Ciss) of 5000 pF at 10 V Vds. With a maximum power dissipation of 8.3 W (Ta) and 136 W (Tc), this MOSFET is suitable for surface-mount applications, packaged in a TO-252-3, DPAK (SC-63) package. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power management solutions across various industries including automotive, industrial, and consumer electronics. The SUD50N02-04P-E3 is supplied in a Tape & Reel (TR) package.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 10 V

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