SUD45P04-16P-GE3
MOSFET P-CH 40V 36A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD45P04-16P-GE3 is a P-Channel MOSFET designed for efficient power switching applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 36A at 25°C (Tc). With a maximum on-resistance (Rds On) of 16.2mOhm at 14A and 20V drive, it offers low conduction losses. The device utilizes surface mount technology, housed in a TO-252AA (DPAK) package for robust thermal performance, dissipating up to 41.7W (Tc). Typical applications include power management in automotive and industrial systems. Key electrical parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 2765 pF at 20V. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 14A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2765 pF @ 20 V |
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