SUD45P03-15-E3
MOSFET P-CH 30V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD45P03-15-E3 is a P-Channel Power MOSFET designed for high-efficiency power management. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C ambient temperature. The low on-resistance (Rds(on)) is specified at a maximum of 15mOhm at 13A and 10V Vgs. With a maximum power dissipation of 4W (Ta) and 70W (Tc), it is suitable for demanding applications. The TO-252AA package facilitates surface mounting, making it ideal for compact designs in industries such as automotive and industrial power control. Key parameters include a gate charge (Qg) of 125 nC maximum at 10V Vgs and input capacitance (Ciss) of 3200 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |