SUD45P03-10-E3
MOSFET P-CH 30V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD45P03-10-E3 is a P-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 15A at 25°C, with a maximum power dissipation of 4W (Ta) or 70W (Tc). The device exhibits a low on-resistance (Rds On) of 10mOhm at 15A and 10V gate-source voltage, facilitated by its TrenchFET technology. Key parameters include a maximum gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 6000 pF at 25V. The SUD45P03-10-E3 is available in a TO-252AA surface mount package, operating across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |