SUD45P03-09-GE3
MOSFET P-CH 30V 45A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SUD45P03-09-GE3 is a P-Channel Power MOSFET offering a 30V drain-source voltage and a continuous drain current of 45A at 25°C (Tc). This surface-mount device in a TO-252AA package features a low on-resistance of 8.7mOhm maximum at 20A and 10V Vgs. The MOSFET supports a gate-source voltage range of ±20V, with a threshold voltage of 2.5V maximum at 250µA. Key parameters include input capacitance (Ciss) of 2700pF maximum at 15V Vds and gate charge (Qg) of 90nC maximum at 10V Vgs. With a maximum power dissipation of 41.7W (Tc), it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 15 V |
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