SUD42N03-3M9P-GE3
MOSFET N-CH 30V 42A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD42N03-3M9P-GE3 is an N-Channel TrenchFET® MOSFET designed for high-efficiency power conversion applications. This surface-mount device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 42A at 25°C (Tc). The ultra-low on-resistance (Rds(on)) of 3.9mOhm is achieved at 22A and 10V Vgs, minimizing conduction losses. Featuring a maximum gate charge (Qg) of 100 nC at 10V Vgs and an input capacitance (Ciss) of 3535 pF at 15V Vds, the SUD42N03-3M9P-GE3 is optimized for fast switching performance. Power dissipation is rated at 2.5W (Ta) and 73.5W (Tc). The component operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, typically on tape and reel. This MOSFET is commonly utilized in power supplies, automotive electronics, and industrial motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3535 pF @ 15 V |
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