SUD40N04-10A-E3
MOSFET N-CH 40V 40A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD40N04-10A-E3 is an N-Channel Power MOSFET designed for efficient power handling. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 40A at 25°C. The low on-resistance (Rds On) of 10mOhm is achieved at 40A and 10V gate-source voltage, minimizing conduction losses. With a maximum power dissipation of 71W, it is suitable for demanding applications. The device operates over a wide temperature range of -55°C to 175°C (TJ) and is packaged in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 35 nC (max) at 10V and input capacitance of 1700 pF (max) at 25V. This MOSFET is commonly utilized in automotive, industrial power control, and high-power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |