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SUD40N04-10A-E3

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SUD40N04-10A-E3

MOSFET N-CH 40V 40A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD40N04-10A-E3 is an N-Channel Power MOSFET designed for efficient power handling. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 40A at 25°C. The low on-resistance (Rds On) of 10mOhm is achieved at 40A and 10V gate-source voltage, minimizing conduction losses. With a maximum power dissipation of 71W, it is suitable for demanding applications. The device operates over a wide temperature range of -55°C to 175°C (TJ) and is packaged in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 35 nC (max) at 10V and input capacitance of 1700 pF (max) at 25V. This MOSFET is commonly utilized in automotive, industrial power control, and high-power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)71W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V

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