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SUD40N02-08-E3

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SUD40N02-08-E3

MOSFET N-CH 20V 40A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SUD40N02-08-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current rating of 40A at 25°C (Tc). With a low on-resistance (Rds On) of 8.5mOhm maximum at 20A and 4.5V gate-source voltage, it minimizes conduction losses. The MOSFET utilizes TrenchFET® technology for superior performance and a low gate charge of 35 nC maximum at 4.5V. Its TO-252AA (DPAK) surface-mount package offers robust thermal management with a maximum power dissipation of 71W at 25°C (Tc) and 8.3W at 25°C (Ta). Operating across a temperature range of -55°C to 175°C (TJ), the SUD40N02-08-E3 is suitable for demanding applications in automotive, industrial, and power supply sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 4.5V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2660 pF @ 20 V

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