SUD40N02-08-E3
MOSFET N-CH 20V 40A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD40N02-08-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current rating of 40A at 25°C (Tc). With a low on-resistance (Rds On) of 8.5mOhm maximum at 20A and 4.5V gate-source voltage, it minimizes conduction losses. The MOSFET utilizes TrenchFET® technology for superior performance and a low gate charge of 35 nC maximum at 4.5V. Its TO-252AA (DPAK) surface-mount package offers robust thermal management with a maximum power dissipation of 71W at 25°C (Tc) and 8.3W at 25°C (Ta). Operating across a temperature range of -55°C to 175°C (TJ), the SUD40N02-08-E3 is suitable for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 20 V |