SUD35N10-26P-T4GE3
MOSFET N-CH 100V 35A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD35N10-26P-T4GE3 is an N-Channel power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 35A at 25°C (Tc). The Rds(On) is specified at a maximum of 26mOhm at 12A and 10V gate-source voltage. The device utilizes advanced TrenchFET® technology for low on-resistance and improved thermal performance, with a maximum power dissipation of 83W at 25°C (Tc). Key characteristics include a gate charge (Qg) of 47 nC (max) at 10V and input capacitance (Ciss) of 2000 pF (max) at 12V. The Vishay Siliconix SUD35N10-26P-T4GE3 is housed in a TO-252AA package (TO-252-3, DPAK) suitable for surface mounting and is supplied on tape and reel. This MOSFET is commonly utilized in power conversion, industrial, and automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 12 V |
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