SUD35N10-26P-E3
MOSFET N-CH 100V 35A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD35N10-26P-E3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power conversion applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc). The Vishay Siliconix SUD35N10-26P-E3 offers a low on-resistance (Rds On) of 26mOhm maximum at 12A and 10V, contributing to reduced conduction losses. With a maximum gate charge (Qg) of 47nC at 10V and input capacitance (Ciss) of 2000pF at 12V, efficient switching performance is achieved. The power dissipation capabilities are 8.3W (Ta) and 83W (Tc). This component is housed in a TO-252AA surface mount package, suitable for automated assembly. Operating temperature ranges from -55°C to 175°C (TJ). Applications include power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 12 V |
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