SUD35N05-26L-E3
MOSFET N-CH 55V 35A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD35N05-26L-E3 is an N-Channel Power MOSFET offering a 55V drain-source voltage and a continuous drain current of 35A at 25°C (Tc). This device features a low Rds(on) of 20mOhm maximum at 20A and 10V Vgs, achieved through advanced trench technology. The gate charge (Qg) is specified at a maximum of 13 nC at 5V Vgs. With a maximum power dissipation of 7.5W (Ta) and 50W (Tc), and an operating junction temperature range of -55°C to 175°C, this component is suitable for demanding applications. Mounting is facilitated by the TO-252-3, DPAK package, supplied on tape and reel. This MOSFET is commonly utilized in power supply designs, automotive applications, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 25 V |
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