SUD25N15-52-T4-E3
MOSFET N-CH 150V 25A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD25N15-52-T4-E3 is an N-Channel Power MOSFET engineered for high-efficiency power conversion applications. This device features a 150V drain-source voltage (Vdss) and a continuous drain current of 25A at 25°C (Tc). With a low on-resistance (Rds On) of 52mOhm maximum at 5A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1725 pF at 25V. Designed for surface mounting in a TO-252AA (DPAK) package, it supports up to 3W power dissipation in free air (Ta) and 136W under typical conditions (Tc). Operating temperature range is -55°C to 175°C. This component is widely utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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