SUD25N15-52-BE3
MOSFET N-CH 150V 25A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD25N15-52-BE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 150 V drain-source voltage rating and a continuous drain current capability of 25 A at 25°C (Tc). The TrenchFET® series technology ensures low on-resistance, specified at a maximum of 52 mOhm at 5 A and 10 V Vgs. With a gate charge (Qg) of 40 nC maximum at 10 V, it offers efficient switching performance. Input capacitance (Ciss) is rated at 1725 pF maximum at 25 V. The component is housed in a TO-252AA (DPAK) surface-mount package, facilitating compact board designs. It supports a wide operating temperature range from -55°C to 175°C (TJ). Power dissipation is 3 W (Ta) and 136 W (Tc). This MOSFET is commonly utilized in power supply, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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