SUD25N04-25-T4-E3
MOSFET N-CH 40V 25A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD25N04-25-T4-E3 is an N-channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 25A (Tc). The low on-resistance of 25mOhm at 25A and 10V Vgs ensures high efficiency. It is constructed using Vishay's TrenchFET technology for improved performance. The TO-252AA package allows for surface mounting and offers a maximum power dissipation of 3W (Ta) and 33W (Tc). Key parameters include a gate charge of 20 nC (Max) at 10V and an input capacitance of 510 pF (Max) at 25V. This device is suitable for use in power management, automotive, and industrial power conversion systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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