SUD25N04-25-E3
MOSFET N-CH 40V 25A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD25N04-25-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 25mOhm maximum at 25A and 10V Vgs. With a maximum power dissipation of 3W (Ta) and 33W (Tc), it is suitable for demanding applications. The surface mount TO-252AA package facilitates integration into compact designs. Key parameters include a gate charge (Qg) of 20 nC maximum at 10V Vgs and an input capacitance (Ciss) of 510 pF maximum at 25V Vds. This MOSFET is utilized in various industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |