SUD23N06-31L-E3
MOSFET N-CH 60V TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD23N06-31L-E3 is an N-channel power MOSFET with a 60V drain-source breakdown voltage. This device features a low on-resistance of 31mOhm at 15A and 10V Vgs, optimized for efficient power switching. With a continuous drain current capability of 23A (Tc) and a maximum power dissipation of 100W (Tc) in a TO-252AA package, it is suitable for applications requiring robust thermal performance. Key parameters include a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 670pF at 25V. The MOSFET operates across a wide temperature range from -55°C to 175°C. This component finds application in power management, automotive electronics, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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