SUD23N06-31-BE3
MOSFET N-CH 60V 9.1A/21.4A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD23N06-31-BE3 is an N-Channel TrenchFET® MOSFET featuring a 60V drain-source voltage. This device offers a continuous drain current of 9.1A at ambient temperature and 21.4A at case temperature, with maximum power dissipation of 5.7W (Ta) and 31.25W (Tc). The on-resistance (Rds On) is specified at a maximum of 31mOhm at 15A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 670pF at 25V. The SUD23N06-31-BE3 is housed in a TO-252AA (DPAK) surface mount package and operates within a temperature range of -55°C to 150°C. It is commonly employed in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Ta), 21.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.7W (Ta), 31.25W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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