SUD19P06-60-BE3
MOSFET P-CH 60V 18.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD19P06-60-BE3 is a P-channel TrenchFET® power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 18.3A at 25°C (Tc). The low on-resistance of 60mOhm maximum at 10A and 10V gate-source voltage (Vgs) minimizes conduction losses. It is available in a TO-252AA (DPAK) surface mount package, facilitating efficient thermal management with a maximum power dissipation of 38.5W (Tc). Key parameters include a gate charge (Qg) of 40nC maximum at 10V Vgs and input capacitance (Ciss) of 1710pF maximum at 25V Vds. Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V |
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