SUD17N25-165-E3
MOSFET N-CH 250V 17A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD17N25-165-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a maximum drain-source voltage of 250V and a continuous drain current of 17A (Tc) at 25°C. The low on-resistance of 165mOhm is achieved at 14A and 10V gate drive, with a maximum gate-source voltage of ±20V. Key parameters include a gate charge of 42nC (max) at 10V and input capacitance of 1950pF (max) at 25V. The SUD17N25-165-E3 offers a power dissipation capability of 3W (Ta) and 136W (Tc). It is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. This component is suitable for applications in industrial power supplies, automotive electronics, and renewable energy systems where robust performance and thermal management are critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |