SUD15N15-95-BE3
MOSFET N-CH 150V 15A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD15N15-95-BE3 is a N-Channel power MOSFET designed for demanding applications. This device features a 150V Drain-Source Voltage (Vdss) and a continuous drain current capability of 15A at 25°C (Tc). The Rds(On) is specified at a maximum of 95mOhm with a 15A drain current and 10V gate-source drive voltage. The MOSFET technology offers efficient switching and low on-resistance. Key parameters include a Gate Charge (Qg) of 25 nC (max) at 10V and an Input Capacitance (Ciss) of 900 pF (max) at 25V. It is packaged in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Typical industries utilizing this component include automotive, industrial power supplies, and power management systems. The device operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 62W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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