SUD09P10-195-BE3
MOSFET P-CH 100V 8.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SUD09P10-195-BE3, offers a 100V drain-to-source voltage rating. This device features a maximum continuous drain current of 8.8A at 25°C (Tc) and a low on-resistance of 195mOhm at 3.6A and 10V Vgs. The P-channel MOSFET utilizes advanced trench technology for optimized performance. Its TO-252AA (DPAK) surface mount package allows for efficient thermal management, with a maximum power dissipation of 32.1W at 25°C (Tc). Key parameters include a gate charge of 34.8 nC (max) at 10V Vgs and input capacitance of 1055 pF (max) at 50V Vds. Operating temperature range is -55°C to 150°C. This component is commonly found in power management applications, automotive systems, and industrial controls.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 32.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF @ 50 V |
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