SUD08P06-155L-T4E3
MOSFET P-CH 60V 8.4A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD08P06-155L-T4E3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 8.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 155mOhm when driven at 5A with a 10V gate-source voltage. Optimized for surface mounting, it is housed in a TO-252AA package. The device offers a maximum gate charge of 19 nC at 10V and an input capacitance (Ciss) of 450 pF at 25V. Power dissipation is rated at 1.7W (Ta) and 20.8W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for use in power management, battery charging, and power distribution systems within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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