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SUD08P06-155L-E3

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SUD08P06-155L-E3

MOSFET P-CH 60V 8.4A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SUD08P06-155L-E3 is a P-Channel Power MOSFET from the TrenchFET® series. This component features a 60 V drain-source voltage and a continuous drain current of 8.4 A at 25°C (Tc). Its low on-resistance is specified at a maximum of 155 mOhm at 5 A, 10 V. The device is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. With a gate charge (Qg) of 19 nC at 10 V and input capacitance (Ciss) of 450 pF, it offers efficient switching characteristics. Power dissipation capabilities are 2 W (Ta) and 25 W (Tc). The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in power management applications within the industrial and automotive sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Rds On (Max) @ Id, Vgs155mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V

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