SUD08P06-155L-BE3
MOSFET P-CH 60V 8.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD08P06-155L-BE3 is a P-Channel MOSFET designed for efficient power switching. This device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 8.2A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 155mOhm at 5A and 10V Vgs. With a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 450 pF at 25V, it offers controlled switching characteristics. The MOSFET is housed in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Power dissipation is rated at 1.7W (Ta) and 20.8W (Tc). Operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial and automotive applications requiring robust power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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