SUD06N10-225L-GE3
MOSFET N-CH 100V 6.5A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD06N10-225L-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.5 A at 25°C (Tc). The low on-resistance (Rds On) of 200 mOhm at 3 A and 10 V gate drive, combined with a low gate charge of 4 nC at 5 V, contributes to reduced conduction and switching losses.
The SUD06N10-225L-GE3 is housed in a surface-mount TO-252AA (DPAK) package, offering a robust thermal performance with a maximum power dissipation of 16.7 W at 25°C (Tc). This component is suitable for use in power supplies, motor control, and automotive applications where high efficiency and reliability are critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 16.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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