SUD06N10-225L-E3
MOSFET N-CH 100V 6.5A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD06N10-225L-E3 is a TrenchFET® series N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C (Tc). The Rds(On) is specified at a maximum of 200mOhm at 3A and 10V Vgs, with a drive voltage range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 4nC at 5V and input capacitance (Ciss) of 240pF at 25V. The device supports a maximum Vgs of ±20V and has a Vgs(th) of 3V at 250µA. With a maximum power dissipation of 1.25W (Ta) and 20W (Tc), it is housed in a TO-252AA (DPAK) surface mount package, supplied on tape and reel for automated assembly. Operating temperatures range from -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and consumer electronics power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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