SUB75P03-07-E3
MOSFET P-CH 30V 75A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUB75P03-07-E3 is a P-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 7mOhm at 30A and 10V, it minimizes conduction losses. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, supporting efficient thermal management with a maximum power dissipation of 187W (Tc). Key electrical characteristics include a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 9000 pF at 25V. This component is optimized for high-current switching and power management in industries such as automotive, industrial, and telecommunications. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 187W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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