SQS484EN-T1_BE3
MOSFET N-CH 40V 16A 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SQS484EN-T1-BE3. This TrenchFET® series device features a 40V drain-source voltage and a continuous drain current of 16A at 25°C. It offers a low on-resistance of 9mOhm maximum at 16.4A and 10V Vgs. The device is constructed using advanced MOSFET technology and packaged in a PowerPAK® 1212-8 surface mount package, supplied on tape and reel. Key electrical parameters include a gate charge of 39nC maximum at 10V Vgs and an input capacitance of 1855pF maximum at 25V Vds. The maximum power dissipation is rated at 62W, with an operating temperature range of -55°C to 175°C. This component is AEC-Q101 qualified and suitable for automotive applications, as well as power management in industrial and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 16.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1855 pF @ 25 V |
| Qualification | AEC-Q101 |
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