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SQRS140ELP-T1_GE3

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SQRS140ELP-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SQRS140ELP-T1-GE3 is an N-Channel TrenchFET® GenIV Power MOSFET designed for demanding automotive applications. This surface mount device features a 40 V (D-S) rating and boasts a continuous drain current (Id) of 504 A at 25°C (Tc), with a maximum power dissipation of 266 W (Tc). Optimized for low on-resistance, the SQRS140ELP-T1-GE3 offers a maximum Rds On of 0.6 mOhm at 15 A and 10 V. Key electrical parameters include an input capacitance (Ciss) of 15398 pF (Max) at 25 V and a gate charge (Qg) of 294 nC (Max) at 10 V. The device operates across a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified. The PowerPAK® SO-8SW package ensures efficient thermal management. This component is commonly utilized in automotive power management and switching circuits.

Additional Information

Series: TrenchFET® GenIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C504A (Tc)
Rds On (Max) @ Id, Vgs0.6mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)266W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackagePowerPAK® SO-8SW
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15398 pF @ 25 V
QualificationAEC-Q101

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