SQM110P04-04L-GE3
MOSFET P-CH 40V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQM110P04-04L-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power conversion. This device features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 120 A at 25°C (Tc). The low on-resistance (Rds On) of 4 mOhm at 30 A and 10 V gate drive ensures minimal conduction losses. With a maximum power dissipation of 375 W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 330 nC (max) and input capacitance (Ciss) of 13980 pF (max). The SQM110P04-04L-GE3 is provided in a TO-263-3, D2PAK surface-mount package, commonly utilized in automotive, industrial, and power supply applications. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13980 pF @ 20 V |