SQD50N04-09H-GE3
MOSFET N-CH 40V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQD50N04-09H-GE3 is a N-Channel power MOSFET designed for demanding applications. This component features a maximum Drain-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 50A (Tc) at 25°C. The low on-resistance (Rds On) of 9mOhm is achieved at 20A and 10V Vgs, ensuring efficient power transfer. With a Gate Charge (Qg) of 76 nC (Max) at 10 V and an input capacitance (Ciss) of 4240 pF (Max) at 25 V, this MOSFET is suitable for high-speed switching circuits. The Vishay Siliconix SQD50N04-09H-GE3 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivered in cut tape. Typical applications include power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 25 V |