SQD35N05-26L-GE3
MOSFET N-CH 55V 30A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQD35N05-26L-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 30 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 20 mOhm at 20 A and 10 V Vgs. With a gate charge (Qg) of 18 nC at 5 V Vgs and a maximum input capacitance (Ciss) of 1175 pF at 25 V Vds, this MOSFET offers efficient switching characteristics. The Vishay Siliconix SQD35N05-26L-GE3 is packaged in a TO-252AA (DPAK) surface-mount case and supports a maximum power dissipation of 50 W (Tc). It operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1175 pF @ 25 V |
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