SQ3427EV-T1_GE3
MOSFET P-CH 60V 5.3A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SQ3427EV-T1-GE3 is a P-Channel Power MOSFET designed for demanding automotive applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.3A (Tc) at 25°C. With a maximum power dissipation of 5W (Tc) and a low Rds(on) of 95mOhm at 4.5A and 10V Vgs, it offers efficient power handling. The MOSFET is packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 22 nC at 10V and input capacitance (Ciss) of 1000 pF at 30V. This device is qualified to AEC-Q101 standards, making it suitable for automotive powertrain, body electronics, and industrial motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 30 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
