SQ3427EEV-T1-GE3
MOSFET P-CH 60V 5.5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SQ3427EEV-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This component features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 5.5A (Tc) at 25°C. The device offers a maximum On-Resistance (Rds On) of 82mOhm at 4.5A and 10V Vgs, with a power dissipation of 5W (Tc). The SQ3427EEV-T1-GE3 is housed in a 6-TSOP package, suitable for surface mount integration. Key electrical characteristics include a gate charge (Qg) of 32 nC (Max) at 10V Vgs and input capacitance (Ciss) of 1125 pF (Max) at 30V Vds. This MOSFET operates across an industrial temperature range of -55°C to 175°C (TJ). It finds application in various sectors including automotive, industrial, and consumer electronics power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1125 pF @ 30 V |